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CYStech Electronics Corp.
Low VCE(sat) NPN Epitaxial Planar Transistor
Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 1/4
BTD2150N3
Features
* Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A * Excellent current gain characteristics * Complementary to BTB1424N3
Symbol
BTD2150N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw350s, Duty2%.
Symbol VCBO VCEO VEBO IC ICP Pd RJA Tj Tstg
Limit 60 60 6 4 7 (Note 1) 225 556 150 -55~+150
Unit V V V A A mW C/W C C
BTD2150N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 60 60 6 120 120 100 Typ. 0.25 90 45 Max. 100 100 0.3 0.5 1.5 820 Unit V V V nA nA V V V MHz pF
Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 2/4
Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=400mA, IB=20mA IC=2A, IB=100mA IC=2A, IB=200mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE 2
Rank Range Q 120~270 R 180~390 S 270~560 T 390~820
BTD2150N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 3/4
Saturation voltage vs Collector current
1000
VCE(sat)
Saturation voltage---(mV)
Current gain---HFE
100
IC=40IB
100
VCE=2V VCE=1V
10
IC=10IB IC=20IB
10 1 10 100 1000 Collector current---IC(mA) 10000
1 1 10 100 1000 Collector current---IC(mA) 10000
Saturation votlage vs Collector current
10000 Power Dissipation---PD(mW)
VBE(sat)@IC=10IB
Power Derating Curve
250 200 150 100 50 0
Saturation voltage---(mV)
1000
100 1 10 100 1000 10000 Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
BTD2150N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 4/4
A L 3 B 1 2 S
Marking:
TE CF
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2150N3
CYStek Product Specification

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